Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

2011-04-05

2011-04-05

Arbes, C. J (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S830000, C029S846000, C029S852000

Reexamination Certificate

active

07918018

ABSTRACT:
In a method and apparatus for fabricating a semiconductor device having a flexible tape substrate, a hole is punched in the flexible tape substrate. The flexible tape substrate includes a metal layer attached to a polyimide layer without an adhesive there between. A cover is placed on the metal layer to cap a base of the hole. A metal is deposited on the cover exposed at the base of the hole, the metal being used to form a bond with the metal layer. The metal being deposited causes the hole to be plugged up to a selective height. Upon removal of the cover, the metal may also be deposited on the metal layer to increase a thickness of the metal layer.

REFERENCES:
patent: 3868724 (1975-02-01), Perrino
patent: 4411982 (1983-10-01), Shibuya et al.
patent: 4626462 (1986-12-01), Kober et al.
patent: 4812213 (1989-03-01), Barton et al.
patent: 4945029 (1990-07-01), Bronnenberg
patent: 5322976 (1994-06-01), Knudsen et al.
patent: 5790378 (1998-08-01), Chillara
patent: 6153060 (2000-11-01), Pommer et al.
patent: 6532651 (2003-03-01), Andou et al.
patent: 6670718 (2003-12-01), Chinda et al.
patent: 6916689 (2005-07-01), Pritchett et al.
patent: 2006/0166490 (2006-07-01), Takashi
patent: 2007/0175025 (2007-08-01), Tsukamoto et al.
patent: 2007/0220745 (2007-09-01), Busch
patent: 11-121541 (1994-04-01), None

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