Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1992-10-14

1994-08-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437981, 437246, 148DIG105, H01L 21288

Patent

active

053407733

ABSTRACT:
A method of fabricating a semiconductor device in which first an aluminum film is etched using a photoresist pattern as a mask, and then the patterned aluminum film is used as a mask for plating to form a pattern of gold plating film. In so doing, if a wiring is formed using a plating process, the problems of deformity of the gold plating film due to degradation of a plating solution, short-circuits between the patterns due to cracks in the plating mask, and re-adhering of etched material when etching the electrical current paths used during the electroplating process, and the problem of sideways etching can be solved.

REFERENCES:
patent: 4330343 (1989-05-01), Christou et al.
patent: 4798650 (1989-01-01), Nakamura et al.
patent: 4919748 (1990-04-01), Bredbenner et al.
patent: 4988412 (1991-01-01), Liu et al.
patent: 5156996 (1992-10-01), Miley

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