Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1995-06-06

1997-08-26

Niebling, John

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438660, 438665, 438964, H01L 21265

Patent

active

056610688

ABSTRACT:
A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.

REFERENCES:
patent: 4718992 (1988-01-01), Funahashi et al.
patent: 4727044 (1988-02-01), Yamazaki
patent: 4800177 (1989-01-01), Nakamae
patent: 4804438 (1989-02-01), Rhodes
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 4892843 (1990-01-01), Schmitz et al.
patent: 4927783 (1990-05-01), Arai et al.
patent: 5043780 (1991-08-01), Fazan et al.
patent: 5071788 (1991-12-01), Joshi
patent: 5082797 (1992-01-01), Chan
patent: 5110752 (1992-05-01), Lu
patent: 5138411 (1992-08-01), Sandhu
patent: 5147826 (1992-09-01), Liu et al.
patent: 5195018 (1993-03-01), Kwon et al.
patent: 5223081 (1993-06-01), Doan
patent: 5223455 (1993-06-01), Itoh et al.
patent: 5231042 (1993-07-01), Ilderem et al.
patent: 5231054 (1993-07-01), Kosugi
patent: 5232876 (1993-08-01), Kim et al.
patent: 5236865 (1993-08-01), Sandhu et al.
patent: 5240879 (1993-08-01), De Bruin
patent: 5332696 (1994-07-01), Kim et al.
H. Watanabe et al., "A New Stacked Capacitor Structure Using Hemispherical-Grain (HSG) Poly-Silicon Electrodes", Extended Abstracts of the 22nd (1990) International) Conference on Solid State Devices and Materials, at pp. 873-876, S-CII-5 (Sendai, 1990), month unknown.
M.L. Green et al., "The Formation and Structure of CVD W Films Produced by the Si Reduction of WF.sub.6 ", The Electrochem. Society Solid-State Science and Technology, vol. 134, No. 9, at pp. 2285-2292, (Sep., 1987).
Wolf and Tauber, "Silicon Processing for the VLSI Era", vol. I, p. 367, 1986, no month provided.
Wolf, "Silicon Processing for the VLSI Era vol. 2: Process Integration", pp. 111-117 1990 month unknown.

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