Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1996-06-17

1997-11-04

Dang, Trung

Fishing, trapping, and vermin destroying

437 89, 437 69, H01L 2176

Patent

active

056839332

ABSTRACT:
To minimize error in size and form a thick oxide layer as field insulating means in a narrow isolation region, a method of fabricating a semiconductor device is carried out as followings.
A polysilicon layer 3 is formed on a silicon substrate 1. A silicon nitride layer 5 is then formed on the polysilicon layer 3. Thereafter, an aperture 7 is formed in the silicon nitride layer 5 and reaches the polysilicon layer. A silicon layer 9 is formed in the aperture 7 by epitaxial growth technique. The silicon layer 9 is selectively oxidized to form an oxide layer 10 as field insulating means. The silicon nitride layer 5 and a portion of the polysilicon layer 3 which was left unoxidized are removed. This makes it possible to form the desired thick oxide layer as field insulating means in a narrow region.

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Sung et al., "the Impact of Poly-Removal Techniques on Thin Thermal Oxide Property in Poly-Buffer LDCOS Technology", IEEE Transaction on Electron Devices, vol. 38, No. 8, Aug. 1991, pp. 1970-1973.

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