Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1977-01-21

1978-01-03

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 156654, 156628, H01L 21225

Patent

active

040664856

ABSTRACT:
A method of fabricating a semiconductor device comprises steps for forming recesses which can be used in the subsequent visual alignment of photomasks. The novel recess forming steps are so linked with a conventional processing step that the total number of steps required for the formation of the recesses is reduced. The present method is particularly adaptable to the fabrication of unisurface silicon controlled rectifiers wherein a doped isolation-type grid is formed to define each device.

REFERENCES:
patent: 3560280 (1971-02-01), Nishida
patent: 3579057 (1971-05-01), Stoller
patent: 3685141 (1972-08-01), Sandera
patent: 3843428 (1974-10-01), Kraft
patent: 3886005 (1975-05-01), Cota et al.
patent: 3972754 (1976-08-01), Riseman
patent: 4021269 (1977-05-01), Anthony et al.
patent: 4029528 (1977-06-01), Rosnowski

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