Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1979-01-05

1980-08-26

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29588, H01L 21225

Patent

active

042193737

ABSTRACT:
A method of fabricating a semiconductor device of the type wherein aluminium layers are selectively deposited on the major surface of a silicon semiconductor substrate and thereafter aluminium is selectively diffused into the silicon semiconductor substrate by means of heat treatment in an atmosphere including an oxygen gas. Recesses are selectively formed in at least one major surface of the silicon semiconductor substrate, aluminium is deposited onto the recesses, and the silicon semiconductor substrate is then subjected to a heat treatment to selectively diffuse the aluminium into the silicon semiconductor substrate. Layers of oxide of silicon-aluminium alloy formed on the major surface subjected to the aluminium diffusion will not cause any damage of a photo-mask and at the same time accuracy in positioning the photo-mask may be improved. A failure to mount a semiconductor element onto a heat sink may also be prevented.

REFERENCES:
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patent: 3735483 (1973-05-01), Sheldon
patent: 3936319 (1976-02-01), Anthony et al.
patent: 3998662 (1976-12-01), Anthony et al.
patent: 4040878 (1977-08-01), Rowe
patent: 4066485 (1978-01-01), Rosnowski et al.

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