Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1994-02-02

1995-03-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437915, 437974, 148DIG10, 148DIG135, H01L 21265

Patent

active

053995104

ABSTRACT:
In order to simplify the structure of a power amplifying transistor and improve its high-frequency characteristics, a base electrode (7b) and a collector electrode (7c) are formed on the surface of such a power amplifying transistor, while an emitter electrode (7e) is formed on its rear surface. Since it is possible to easily ground the emitter electrode (7e) and use the base and collector electrodes (7b, 7c) as an input and an output respectively, the structure is simplified and no wiring pattern is required, whereby high-frequency characteristics can be improved.

REFERENCES:
patent: 4651410 (1987-03-01), Feygenson
patent: 4728616 (1988-03-01), Ankri et al.
patent: 4981807 (1991-01-01), Jambotkar

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