Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1976-06-21

1978-07-11

Goolkasian, John T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 148189, 148190, 427 85, H01L 21225, H01L 21223

Patent

active

040999971

ABSTRACT:
A method of fabricating a semiconductor device having a one type conductivity portion substantially surrounded by a second type conductivity portion is disclosed. The method involves selectively diffusing different impurities having the same conductivity inducing effect. The disclosed method is particularly adaptable to forming a plurality of devices in a relatively thick semiconductor wafer.

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patent: 3523042 (1970-08-01), Bower
patent: 3615945 (1971-10-01), Yokozawa
patent: 3649387 (1972-03-01), Frentz et al.
patent: 3748198 (1973-07-01), Basi et al.
patent: 3886569 (1975-05-01), Basi et al.
patent: 3901735 (1975-08-01), Dunkley
patent: 3925121 (1975-12-01), Touchy
patent: 4040878 (1977-08-01), Rowe

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