Method of fabricating a semiconductor device

Details Method of fabricating a semiconductor device Method of fabricating a semiconductor device

1969-06-13

1976-10-26

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

29577, 357 54, 357 72, C25D 502, B01J 1700, H01L 2330

Patent

active

039882144

ABSTRACT:
An integrated circuit device with multi-level interconnection wiring structure built upon the substrate wherein each level is formed of conductor and insulator portions and wherein each level has a surface substantially parallel to the surface of the substrate.
The method of fabricating the above-described device wherein a suitable substance such as aluminum is deposited over the surface of the substrate to form a metal film, and wherein the aluminum or other substance is then selectively anodized into insulating portions around conducting channels.

REFERENCES:
patent: 3169892 (1965-02-01), Lemelson
patent: 3337426 (1967-08-01), Celto
patent: 3461347 (1969-08-01), Lemelson
patent: 3468728 (1969-05-01), Martin
patent: 3634203 (1972-01-01), Richardson et al.

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