Method of fabricating a semiconductor beam lead device

Fishing – trapping – and vermin destroying

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437 62, 437 65, 437 86, 437 99, 437177, 437904, 437906, 437927, 437974, H01L 2712

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048596299

ABSTRACT:
A semiconductor device and associated method of fabrication in which the device includes a semiconductor substrate having a cavity therein extending in a frame pattern. An insulating layer such as one of silicon nitride is deposited in the cavity followed by the deposition of polysilicon to substantially fill the cavity and provide structural support. An epitaxy layer is formed over the surface of the substrate along with a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, resectively. Metallization is deposited to form separate beam leads to provide ohmic contact at the epitaxy layer and substrate.

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