Method of fabricating a semiconductor apparatus

Details Method of fabricating a semiconductor apparatus Method of fabricating a semiconductor apparatus

1989-11-13

1991-07-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 6, 437 40, 437913, 437 29, H01L 21265

Patent

active

050305816

ABSTRACT:
A semiconductor apparatus comprises a semiconductor body of one conductivity type; a first impurity region of an opposite conductivity type, which is formed in the surface area of the semiconductor body; impurity regions of the opposite conductivity type, formed in the surface area of the semiconductor body, at locations away from the first impruity region; second and third impurity regions of one conductivity type, which seve as source and drain regions, respectively, and are formed in the impurity regions of an opposite conductivity type, so as to sandwich a channel reigon; and a gate electrode formed on the channel region, through an insulative layer. In this semiconductor apparatus, the impurity regions of the opposite conductivity type include fourth and fifth impurity regions, formed in the channel region such that at least parts of the fourth and fifth impurity regions overlap.

REFERENCES:
patent: 4084311 (1978-04-01), Yasuoka et al.
patent: 4205342 (1980-05-01), Darwish et al.
patent: 4287661 (1981-09-01), Stoffel
patent: 4306916 (1981-12-01), Wollesen et al.
patent: 4713329 (1987-12-01), Fang et al.
patent: 4783424 (1988-11-01), Ohno et al.

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