Method of fabricating a self-aligned high speed MOSFET device

Details Method of fabricating a self-aligned high speed MOSFET device Method of fabricating a self-aligned high speed MOSFET device

1994-10-28

1997-02-04

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 45, 437 69, H01L 21265, H01L 21302, H01L 2176, H01L 21306

Patent

active

055997287

ABSTRACT:
A high speed MOSFET device includes a punchthrough stopper region in the channel of the device formed by high energy ion implantation through the gate electrode and self-aligned therewith. The device has reduced capacitance. A self-aligned recessed channel MOSFET structure includes the punchthrough stopper region to further improve short channel device behavior.

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