Method of fabricating a second semiconductor integrated circuit

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364489, 364488, G06F 1560, H01L 2700

Patent

active

051827190

ABSTRACT:
A method of fabricating a second semiconductor integrated circuit device includes steps of forming a first semiconductor integrated circuit device which has a microcomputer and is furnished with an EPROM; determining a program for controlling the microcomputer and to be set in the EPROM (performing an initial evaluation) while information is being written into and erased from the EPROM built in the first semiconductor integrated circuit device; and thereafter forming a second semiconductor integrated circuit device in which the EPROM of the first semiconductor integrated circuit device is replaced with a mask ROM. In replacing the EPROM with the mask ROM, the peripheral circuits required for both the EPROM and the mask ROM have their circuit arrangements held basically the same, and specific peripheral circuits for use in only the EPROM have their circuit regions left as they are as logically inactive regions.

REFERENCES:
patent: 4484292 (1984-11-01), Hong et al.
patent: 4833620 (1989-05-01), Takahashi
patent: 4837447 (1989-06-01), Pierce et al.
patent: 4839821 (1989-06-01), Murakata
patent: 4849904 (1989-07-01), Aipperspach et al.

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