Method of fabricating a Schottky barrier field effect transistor

Details Method of fabricating a Schottky barrier field effect transistor Method of fabricating a Schottky barrier field effect transistor

1984-06-15

1986-05-13

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148 15, 148187, 148DIG140, 427 84, 427 88, H01L 2126, B05D 306

Patent

active

045877106

ABSTRACT:
A method of fabricating a Schottky barrier MOSFET wherein a polysilicon gate chip is disposed adjacent the drain and source regions of a single crystal silicon substrate surface, and a metal is deposited on the top surface of the gate chip and the drain and source regions of the substrate surface by direct reaction of the silicon of the surfaces with a compound of a tungsten or molybdenum. Preferably, the sidewalls of the gate chip are masked during the deposition of metal to avoid the formation of a metal bridge between the gate and drain or the gate and source.

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Koeneke et al., "Schottky MOSFET for VLSI," IEDM 81, IEEE, pp. 367-370 (1981).
Lepselter et al., "SB-IGFET, II: An Ion Implanted IGFET Using Schottky Barriers," Proceedings of the IEEE, May 1969, pp. 812-813.
Sugino et al., "Latchup-Free Schottky-Barrier CMOS," 1983, IEEE, Transactions on Electron Devices, vol. ED-30, No. 2, pp. 110-118 (1983).

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