Method of fabricating a Schottky barrier field effect transistor

Details Method of fabricating a Schottky barrier field effect transistor Method of fabricating a Schottky barrier field effect transistor

1986-01-02

1988-06-21

James, Andrew J.

357 15, 357 59, H01L 2978, H01L 2948, H01L 2904

Patent

active

047528150

ABSTRACT:
A method of fabricating a Schottky barrier MOSFET wherein a polysilicon gate chip is disposed adjacent the drain and source regions of a single crystal silicon substrate surface, and a metal is deposited on the top surface of the gate chip and the drain and source regions of the substrate surface by direct reaction of the silicon of the surfaces with a compound of a tungsten or molybdenum. Preferably, the sidewalls of the gate chip are masked during the deposition of metal to avoid the formation of a metal bridge between the gate and drain or the gate and source.

REFERENCES:
patent: 4324038 (1982-04-01), Chang et al.
Kircher et al. "Fabricating a Gate Field-Effect Transistor" IBM Tech. Disc. Bulletin vol. 13, No.3, 1970, pp. 646-648.

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