Method of fabricating a salicide-structured MOS semiconductor de

Details Method of fabricating a salicide-structured MOS semiconductor de Method of fabricating a salicide-structured MOS semiconductor de

1996-04-01

2000-08-22

Celsa, Bennett

Chemistry: molecular biology and microbiology

Micro-organism, tissue cell culture or enzyme using process...

Preparing compound containing saccharide radical

438655, 438664, 438676, 438677, 438681, 438683, H01L 213205, H01L 214763

Patent

active

061070963

ABSTRACT:
The present invention provides a method of fabricating a semiconductor device, including the steps of (a) forming a gate electrode in device formation regions on a semiconductor substrate having first conductivity, (b) forming diffusion layers in the device formation regions, the diffusion layers having second conductivity, (c) removing naturally oxidized films having been formed on both the diffusion layers and the gate electrode, in vacuum condition, (d) selectively forming cobalt films on both the diffusion layers and the gate electrode by chemical vapor deposition using gas produced by gasifying cobalt organic compound, (e) carrying out thermal annealing to selectively form cobalt disilicide (CoSi.sub.2) films on both the diffusion layers and the gate electrode, the semiconductor substrate being maintained in vacuum condition during the steps (c) to (e), and (f) forming metal wirings in electrical connection with both the diffusion layers and the gate electrode with an interlayer insulating film sandwiched therebetween. The method makes it possible to form high purity thin cobalt films having uniform thickness with high reproducibility, and to prevent both increased leak current across PN junction in the diffusion layers after the formation of cobalt disilicide (CoSi.sub.2) films and decreasing of break down voltage of PN junction.

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