Method of fabricating a reverse staggered type silicon thin film

Details Method of fabricating a reverse staggered type silicon thin film Method of fabricating a reverse staggered type silicon thin film

1990-06-08

1991-10-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 40, 437 41, H01L 2120, H01L 21205

Patent

active

050533541

ABSTRACT:
A reverse staggered type silicon thin film transistor includes a substrate having a gate electrode; a gate insulating layer on the substrate and the gate electrode, the gate insulating layer having a transistor-forming portion; a lower layer silicon film on the transistor-forming portion of the gate insulating layer and in contact therewith, the lower layer silicon film being formed at a first temperature and with a first thickness; an upper layer silicon film formed on the transistor-forming portion of the gate insulating layer at a second temperature which is lower than the first temperature and with a second thickness greater than the first thickness; an n-type silicon layer on the upper layer silicon film and in contact therewith; a source electrode on the n-type silicon layer; and a drain electrode on the n-type silicon layer.

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