Method of fabricating a quantum device

Details Method of fabricating a quantum device Method of fabricating a quantum device

1992-08-25

1993-09-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437107, 437133, 257 9, H01L 2120

Patent

active

052448282

ABSTRACT:
The method of fabricating a quantum device of the invention includes the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.

REFERENCES:
patent: 4865923 (1989-09-01), Ralston et al.
patent: 5106764 (1992-04-01), Harriott et al.

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