Method of fabricating a programmable read-only memory cell incor

Details Method of fabricating a programmable read-only memory cell incor Method of fabricating a programmable read-only memory cell incor

1983-03-07

1986-02-11

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29575, 29576B, 29576C, 29576E, 29578, 29584, 29586, 148 15, 148174, 148187, 148DIG55, 357 2, 357 45, 357 51, 357 59, 365 94, 365103, 365105, 427 86, H01L 2120, H01L 21479

Patent

active

045691215

ABSTRACT:
In fabricating a PROM cell, an electrical isolation mechanism (44 and 32) is formed in a semiconductive body to separate islands of an upper zone (36) of first type conductivity (N) in the body. A semiconductor impurity is introduced into one of the islands to produce a region (48) of opposite type conductivity (P) that forms a PN junction laterally bounded by the island's side boundaries. A highly resistive amorphous semiconductive layer (58) which is irreversibly switchable to a low resistive state is deposited above the region in such a manner as to be electrically coupled to the region. A path of first type conductivity extending from the PN junction through another of the islands to its upper surface is created in the body to complete the basic cell.

REFERENCES:
patent: 3990098 (1976-11-01), Mastrangelo
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4174521 (1979-11-01), Neale
patent: 4203123 (1980-05-01), Shanks
patent: 4403399 (1983-09-01), Taylor
patent: 4420766 (1983-12-01), Kasten
patent: 4442507 (1984-04-01), Roesner
Tanimoto et al., "Novel 14 V Programmable . . . Poly-Si Resistor . . . ", IEEE J. Solid-State Circuits, vol. SC-17, No. 1, Feb. 1982, pp. 62-68.

Affiliated with

Also associated with

Rating

Method of fabricating a programmable read-only memory cell incor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a programmable read-only memory cell incor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a programmable read-only memory cell incor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1199655