Method of fabricating a programmable read-only memory cell incor

Details Method of fabricating a programmable read-only memory cell incor Method of fabricating a programmable read-only memory cell incor

1983-03-07

1986-02-11

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29575, 29576B, 29576C, 29576E, 29578, 29584, 29586, 148 15, 148174, 148187, 148DIG55, 357 2, 357 45, 357 51, 357 59, 357 91, 365 94, 365103, 365105, H01L 21265, H01L 21479

Patent

active

045691207

ABSTRACT:
In fabricating a PROM cell, an electrical isolation mechanism (44 and 32) is formed in a semiconductive body to separate islands of an upper zone (36) of first type conductivity (N) in the body. A semiconductor is introduced into one of the islands to produce a region (48) of opposite type conductivity (P) that forms a PN junction with adjacent semiconductive material of the island. Ions are implanted to convert a surface layer (60) of the region into a highly resistive amorphous form which is irreversibly switchable to a low resistance state. A path of first type conductivity extending from the PN junction through another of the islands to its upper surface is created in the body to complete the basic cell.

REFERENCES:
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patent: 4069068 (1978-01-01), Beyer et al.
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patent: 4203123 (1980-05-01), Shanks
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patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4238694 (1980-12-01), Kimerling et al.
patent: 4403399 (1983-09-01), Taylor
patent: 4420766 (1983-12-01), Kasten
patent: 4432008 (1984-02-01), Maltiel
patent: 4442507 (1984-04-01), Roesner
IBM Technical Disclosure Bulletin, vol. 18, No. 4, Sep. 1975, p. 1211.
Tanimoto et al., "Novel 14 V Programmable . . . Poly-Si Resistor . . . ", IEEE J. Solid-State Circ., vol. SC-17, No. 1, Feb. 1982, pp. 62-68.

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