Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2011-03-22
2011-03-22
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making passive device
Resistor
C257S543000, C257SE27016
Reexamination Certificate
active
07910450
ABSTRACT:
The present invention provides a semiconductor structure including a buried resistor with improved control, in which the resistor is fabricated in a region of a semiconductor substrate beneath a well region that is also present in the substrate. In accordance with the present invention, the inventive structure includes a semiconductor substrate containing at least a well region; and a buried resistor located in a region of the semiconductor substrate that is beneath said well region. The present invention also provides a method of fabricating such a structure in which a deep ion implantation process is used to form the buried resistor and a shallower ion implantation process is used in forming the well region.
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Chinthakindi Anil K.
Coolbaugh Douglas D.
Downes Keith E.
Eshun Ebenezer E.
Florkey John E.
Cain, Esq. David
International Business Machines - Corporation
Kraig William F
Le Thao X
Scully , Scott, Murphy & Presser, P.C.
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