Method of fabricating a polysilicon thin film transistor

Details Method of fabricating a polysilicon thin film transistor Method of fabricating a polysilicon thin film transistor

1995-05-23

1996-07-09

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437937, 437233, H01L 21336

Patent

active

055344453

ABSTRACT:
A process for producing a polysilicon thin film transistor includes hydrogenating the thin film transistor and depositing an atomic hydrogen-containing layer on the thin film transistor. The thin film transistor is characterized by leakage current rates as low as 10.sup.-13 A.

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