Fishing – trapping – and vermin destroying
Patent
1992-09-29
1993-09-07
Fourson, George
Fishing, trapping, and vermin destroying
437233, 437967, 437160, H01L 2120, H01L 21225
Patent
active
052428559
ABSTRACT:
Disclosed is a method of forming a polycrystalline silicon film on a silicon oxide film in which the polycrystalline silicon film includes crystal grains having a large size, typically 4 micrometers, thereby permitting the resistivity of the polycrystalline silicon film to effectively be reduced. An amorphous silicon film is deposited on the silicon oxide film by using a chemical vapor deposition in which the flow rate of impurity gas remains at zero during an initial deposition, after which the flow rate is gradually increased from zero to a predetermined value during a final deposition. Thus, the amorphous silicon film comprises double layers, or an impurity unmixed region abutting the silicon oxide film and an impurity mixed region. After that, by a heat treatment, the amorphous silicon film is crystallized to form a polycrystalline silicon film. Concurrently, the impurity diffusion is accomplished.
REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5155051 (1992-10-01), Noguchi et al.
"Novel Highly Conductive Polycrystalline Silicon Films Reducing Processing Temperature Down to 650.degree. C.", by T. Kobayashi, et al., Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials, Tokyo, 1988, pp. 57-60.
Fourson George
NEC Corporation
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