Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-03-06
2007-03-06
Vanore, David (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C427S523000, C427S566000, C427S569000
Reexamination Certificate
active
11053381
ABSTRACT:
A method of fabricating a polarizing layer using a gas cluster ion beam apparatus (GCIB) is disclosed. The method includes generating a metal-organic gas that includes a metal-organic compound. The metal-organic compound includes a polarizing material, such as iron Fe, Co, or CoFe, for example. The metal-organic gas and a carrier gas are combined to form a composite gas that is supplied to the GCIB. The GCIB processes the composite gas to form a beam of gas cluster ions that include the polarizing material. The beam irradiates an interface surface of a layer of material and at least a portion of the polarizing material remains in contact with the interface surface to form the polarizing layer on the interface surface.
REFERENCES:
patent: 5042887 (1991-08-01), Yamada
patent: 5082359 (1992-01-01), Kirkpatrick
patent: 5855967 (1999-01-01), Kirkpatrick
patent: 6251835 (2001-06-01), Chu et al.
patent: 6331227 (2001-12-01), Dykstra et al.
patent: 6375790 (2002-04-01), Fenner
patent: 6416820 (2002-07-01), Yamada
patent: 6486478 (2002-11-01), Libby et al.
patent: 6491800 (2002-12-01), Kirkpatrick et al.
patent: 6498107 (2002-12-01), Fenner
patent: 6537606 (2003-03-01), Allen et al.
patent: 6595506 (2003-07-01), Zide et al.
patent: 6613240 (2003-09-01), Skinner et al.
patent: 6624081 (2003-09-01), Dykstra et al.
patent: 6629508 (2003-10-01), Dykstra
patent: 6635883 (2003-10-01), Torti et al.
patent: 6646277 (2003-11-01), Mack et al.
patent: 6660340 (2003-12-01), Kirkpatrick
patent: 6676989 (2004-01-01), Kirkpatrick et al.
patent: 6737643 (2004-05-01), Torti et al.
patent: 6750460 (2004-06-01), Greer
patent: 6770874 (2004-08-01), Dykstra
patent: 2004/0037970 (2004-02-01), Akizuki et al.
patent: 2006/0172086 (2006-08-01), Nickel
htt;://www.epion.com/technology—body.html; Epion 15 Pages; Technology-GCIB Overview.
Electronic Engineering Time; Jun. 14, 2004; Infusion Doping Gets the Call in Battle to Stop Leakage; by Mark Lapedus.
http://Solidstate.Articles.Printthis.Clickability.com/PT/CPT?Action=CPT&Title=USJ+and+Strain..; Solidstate Technoogy; USJ and Strained-SI Formation Using Infusion Doping and Slides From Epion ; 64 Pages; Re: GCIB Application.
Pending U.S. Appl. No. 10/977,382, filed Oct. 29, 2004; inventor: Janice H Nickel.
Hewlett--Packard Development Company, L.P.
Vanore David
LandOfFree
Method of fabricating a polarizing layer on an interface does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a polarizing layer on an interface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a polarizing layer on an interface will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3795698