Method of fabricating a photosensitive structure

Details Method of fabricating a photosensitive structure Method of fabricating a photosensitive structure

2006-10-24

2006-10-24

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S075000, C438S070000, C438S060000, C438S508000

Reexamination Certificate

active

07125738

ABSTRACT:
A method of fabrication of a photosensitive device is disclosed. A substrate with at least an insulator layer formed thereon is provided. The insulator layer comprises a plurality of photoreceiving regions, and a plurality of conductive patterns are formed thereon without covering the photoreceiving regions. A dielectric layer is formed on the insulator and the conductive patterns, and polished by CMP thereof. The dielectric layer comprises a first dielectric layer formed by PECVD and a second dielectric layer formed by HDPCVD.

REFERENCES:
patent: 5239412 (1993-08-01), Naka et al.
patent: 5479049 (1995-12-01), Aoki et al.

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