Method of fabricating a phase-shifting semiconductor photomask

Details Method of fabricating a phase-shifting semiconductor photomask Method of fabricating a phase-shifting semiconductor photomask

1996-09-04

1999-08-24

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059423552

ABSTRACT:
A photomask is disclosed in which buffer regions are created in between areas of phase transitions to prevent the formation of null intensity areas on semiconductor wafers fabricated using the photomask of the present embodiment. The buffer regions are first patterned with opaque regions, which act as etch masks for adjoining phase-shifting layers. Then the opaque regions are removed, and the buffer regions may be etched to create buffer regions of varying phase angles.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5194345 (1993-03-01), Rolfson
patent: 5194346 (1993-03-01), Rolfson et al.
patent: 5229255 (1993-07-01), White
patent: 5281500 (1994-01-01), Cathey et al.
patent: 5308722 (1994-05-01), Nistler
patent: 5543254 (1996-08-01), Kim et al.

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