Method of fabricating a phase-change memory

Details Method of fabricating a phase-change memory Method of fabricating a phase-change memory

2011-04-12

2011-04-12

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

C438S282000, C438S622000, C257S248000, C257S528000

Reexamination Certificate

active

07923286

ABSTRACT:
A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

REFERENCES:
patent: 2006/0073662 (2006-04-01), Jang et al.
patent: 2006/0197130 (2006-09-01), Suh et al.

Affiliated with

Also associated with

Rating

Method of fabricating a phase-change memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a phase-change memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a phase-change memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2645493