Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2008-04-22
2010-11-16
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S107000, C438S115000
Reexamination Certificate
active
07833828
ABSTRACT:
A method of creating a patterned device by selecting a substrate; forming a first step on the substrate; depositing a sacrificial layer along the first step and the substrate; depositing a second step on a portion of the sacrificial layer; depositing a second layer on each of a portion of the substrate, sacrificial layer and second step that shares a common resistance to removal by a same agent as the substrate, the first step and the second step; removing a portion of the sacrificial layer so that a gap is created between the second layer and the first step, wherein a portion of the sacrificial layer remains such that the second layer remains; and processing the substrate beneath the gap created between the second layer and the first step.
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Fitz John L.
Turk Harris
Morelli Robert D.
Thai Luan C
United States of America as represented by the Director, The Nat
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