Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2006-02-14
2008-10-28
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S107000, C438S115000
Reexamination Certificate
active
07442577
ABSTRACT:
The present invention is a method of fabricating a patterned device using a sacrificial spacer layer. The first step in this process is to select an appropriate substrate and form a step thereon. The sacrificial layer is then applied to the substrate and a blocking layer is deposited on the sacrificial layer. The blocking layer is etched back to define the mask for the semiconductor structure and the sacrificial layer is removed. The substrate is then etched using the gap created by removal of the sacrificial layer.
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Fitz John Leslie
Turk Harris
Ferragut Jennifer P.
Thai Luan
United States of America as represented by the Director, Nationa
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