Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2009-02-24
2009-12-01
Purvis, Sue (Department: 2826)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21553
Reexamination Certificate
active
07625806
ABSTRACT:
Provided is a method that includes forming a first semiconductor layer on a semiconductor substrate, growing a second semiconductor layer on the first semiconductor layer, forming composite shapes on the first semiconductor layer, each composite shape comprising of an overlying oxide-resistant shape and an underlying second semiconductor shape, with portions of the first semiconductor layer exposed between the composite shapes, forming spacers on sides of the composite shapes, forming buried silicon oxide regions in exposed top portions of the first semiconductor layer, and in portions of the first semiconductor layer located underlying second semiconductor shapes, selectively removing the oxide-resistant shapes and spacers resulting in the second semiconductor shapes, and forming a semiconductor device in a second semiconductor shape wherein a first portion of the semiconductor device overlays the first semiconductor layer and wherein second portions of the semiconductor device overlays a buried silicon oxide region.
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Guo Jhy-Chyum
Hu Chenming
Lin Da-Chi
Tseng Horng-Huei
Haynes and Boone LLP
Purvis Sue
Sandvik Benjamin P
Taiwan Semiconductor Manufacturing Company
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