Method of fabricating a narrow base transistor

Details Method of fabricating a narrow base transistor Method of fabricating a narrow base transistor

1989-09-11

1991-04-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437 99, 437203, 437 72, 148DIG11, 148DIG17, H01L 2100

Patent

active

050082078

ABSTRACT:
There is provided a method for use in the fabrication of a transistor, the method including the steps of: providing a substrate of semiconductor material including a region of first conductivity type; forming a first layer of second conductivity type epitaxial semiconductor material over the region; forming a second layer of second conductivity type epitaxial semiconductor material over the first layer, the second layer of a relatively higher dopant concentration than the first layer; oxidizing a portion of the second layer; and removing the oxidized portion of the second layer to expose a portion of the first layer, the exposed portion of the first layer forming an intrinsic base region. The steps of forming the first and second layers are preferably performed using low temperature, ultra-high vacuum, epitaxial deposition processes.

REFERENCES:
patent: 3600651 (1971-08-01), Duncan
patent: 3915767 (1975-10-01), Welliver
patent: 4104090 (1978-08-01), Pogge
patent: 4157269 (1979-06-01), Ning et al.
patent: 4381956 (1983-05-01), Lane
patent: 4428111 (1984-01-01), Swartz
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4507847 (1985-04-01), Sullivan
patent: 4641416 (1987-02-01), Iranmanesh
patent: 4689872 (1987-09-01), Appel et al.
patent: 4703554 (1987-11-01), Havemann
patent: 4706378 (1987-11-01), Havemann
patent: 4731341 (1988-03-01), Kawakatsu
patent: 4738624 (1988-04-01), Iyer et al.
patent: 4745080 (1988-05-01), Scovell et al.
patent: 4824794 (1989-04-01), Tabata et al.
patent: 4853344 (1989-08-01), Darmawan
patent: 4897363 (1990-01-01), Suda
patent: 4903104 (1990-02-01), Kawai et al.
Jambotkar, "High Performance Transistor Structure", IBM Tech. Discl. Bul., vol. 27, No. 7B, 12/84, pp. 4517-4520.

Affiliated with

Also associated with

Rating

Method of fabricating a narrow base transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a narrow base transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a narrow base transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-420989