Method of fabricating a multilayered dielectric diffusion...

Details Method of fabricating a multilayered dielectric diffusion... Method of fabricating a multilayered dielectric diffusion...

2006-05-02

2008-12-30

Andújar, Leonardo (Department: 2826)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S624000

Reexamination Certificate

active

07470597

ABSTRACT:
A method of fabricating a structure including a low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer is described herein. The method includes applying a coating of a polymeric preceramic precursor, converting the polymeric preceramic precursor into a low-k sublayer, applying a coating of an air barrier sublayer and exposing the air barrier sublayer to a reactive plasma.

REFERENCES:
patent: 6265779 (2001-07-01), Grill et al.
patent: 6917108 (2005-07-01), Fitzsimmons et al.
patent: 2002/0130417 (2002-09-01), Yew et al.
patent: 2003/0089988 (2003-05-01), Matsuura

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