Method of fabricating a multilayer dielectric tunnel barrier...

Details Method of fabricating a multilayer dielectric tunnel barrier... Method of fabricating a multilayer dielectric tunnel barrier...

2005-02-01

2005-02-01

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S761000

Reexamination Certificate

active

06849464

ABSTRACT:
A multilayer dielectric tunnel barrier structure and a method for its formation which may be used in non-volatile magnetic memory elements comprises an ALD deposited first nitride junction layer formed from one or more nitride monolayers i.e., AlN, an ALD deposited intermediate oxide junction layer formed from one or more oxide monolayers i.e., AlxOy, disposed on the first nitride junction layer, and an ALD deposited second nitride junction layer formed from one or more nitride monolayers i.e., AlN, disposed on top of the intermediate oxide junction layer. The multilayer tunnel barrier structure is formed by using atomic layer deposition techniques to provide improved tunneling characteristics while also providing anatomically smooth barrier interfaces.

REFERENCES:
patent: 6347049 (2002-02-01), Childress et al.
patent: 6617173 (2003-09-01), Sneh
patent: 20030003635 (2003-01-01), Paranjpe et al.

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