Metal treatment – Compositions – Heat treating
Patent
1983-02-14
1984-12-11
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29576T, 148175, 148187, 357 91, 427 531, H01L 21263, B05D 306
Patent
active
044876351
ABSTRACT:
A method of producing a superior semiconductor crystallized layer rapidly on a semiconductor substrate with the surface thereof covered with an insulating film is disclosed. An opening, desirably formed by at least two insulating films, is formed at an intersection of scribe lines of the semiconductor substrate. A polycrystal semiconductor film is formed on the insulating films and the opening, after which an energy beam is irradiated spirally on the polycrystal semiconductor film in such a manner that the beam passes at least one opening during each rotation thereof thereby to transform the polycrystal semiconductor film into a crystallized layer for forming a semiconductor element.
REFERENCES:
patent: 4315130 (1982-02-01), Inagaki et al.
patent: 4330363 (1982-05-01), Biegesen
patent: 4372990 (1983-02-01), Lam
patent: 4375993 (1983-03-01), Mori et al.
patent: 4377031 (1983-03-01), Goto et al.
patent: 4377902 (1983-03-01), Shinada et al.
patent: 4381201 (1983-04-01), Sakurai
patent: 4406709 (1983-09-01), Celler et al.
Biegesen et al., Appl. Phys. Letts. 38 (1981), 150.
Geis et al., J. Vac. Sci. Technol. 16 (1979), 1640.
Akiyama Shigenobu
Fuse Genshu
Kugimiya Koichi
Director-General of the Agency of Industrial Science & Technolog
Roy Upendra
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