Method of fabricating a multi-layer gate electrode with annealin

Details Method of fabricating a multi-layer gate electrode with annealin Method of fabricating a multi-layer gate electrode with annealin

1993-08-03

1995-10-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437184, 437192, H01L 21265, H01L 2144, H01L 2148

Patent

active

054590876

ABSTRACT:
The invention provides a method of forming a gate electrode on a channel layer in a field effect transistor. A first layer made of a first metal having a heat resistivity is formed on a gate formation region of a surface of a channel layer on a semiconductor substrate. The substrate is subjected to a heat treatment so as to recover a damage of the channel layer caused by the formation of the first layer. A second layer made of a second metal having a heat resistivity is formed on a surface of the first layer. A third layer made of a third metal having a low electrical resistivity is formed on a surface of the second layer thereby a gate electrode comprising the first, second and third layers is formed on the channel layer free from any damage caused by the formation steps.

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