Method of fabricating a MRAM device

Details Method of fabricating a MRAM device Method of fabricating a MRAM device

2006-01-10

2006-01-10

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S253000, C438S254000, C438S257000, C438S593000

Reexamination Certificate

active

06984530

ABSTRACT:
A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms a bottom electrode and a sense layer that are continuous with each other in a first direction. A second conductive layer and a plurality of layers of material required to form a magnetic tunnel junction stack are patterned in a second mask step. A subsequent etching step forms a top electrode and a plurality of layers of material that are continuous with each other in a second direction, and a plurality of discrete sense layers. The discrete sense layers and the plurality of layers of material define a plurality of magnetic tunnel junction devices.

REFERENCES:
patent: 6780652 (2004-08-01), Lee

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