Method of fabricating a microwave inductor

Details Method of fabricating a microwave inductor Method of fabricating a microwave inductor

1997-10-31

1999-07-27

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

257531, H01L 21465

Patent

active

059306378

ABSTRACT:
Isolation regions are formed on a top surface of a wafer. An ion implantation is performed to implant ions into the wafer. Then, an thermal anneal process is used to form an implanted layer on the wafer. Then, a silicon dioxide or silicon nitride layer is deposited on the implanted layer. Next, a micro inductor is patterned on the insulator layer. Subsequently, a dielectric layer is formed on the inductor for isolation. Next, via holes are created by etching the dielectric layer. A conductive layer is patterned on the dielectric layer and refilled into the via holes. Next, a passivation layer is deposited on the dielectric layer and the conductive layer. An etching is performed to etch the wafer from a bottom surface (a second surface) of the wafer. Finally, a ground plate is connected to the bottom surface (second surface) of the wafer.

REFERENCES:
patent: 5539241 (1996-07-01), Abidi et al.
patent: 5773870 (1998-06-01), Su et al.

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