Method of fabricating a microelectronic die

Details Method of fabricating a microelectronic die Method of fabricating a microelectronic die

2006-01-17

2006-01-17

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S253000, C438S626000

Reexamination Certificate

active

06987028

ABSTRACT:
A method of fabricating a microelectronic die is provided. Transistors are formed in and on a semiconductor substrate. A channel of each transistor is stressed after the transistors are manufactured by first forming a diamond intermediate substrate at an elevated temperature on a handle substrate, allowing the intermediate substrate and the handle substrate to cool, and then removing the handle substrate. The intermediate substrate has a lower coefficient of thermal expansion than the handle substrate, so that the intermediate substrate tends to bow when the handle substrate is removed. Such bowing creates a tensile stress, which translates into a biaxial strain in channels of the transistors. Excessive bowing is counteracted with a compensating polysilicon layer formed at an elevated temperature and having a higher CTE on a side of the diamond intermediate substrate.

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