Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-12-11
2009-06-30
Wilczewski, M. (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S393000, C438S381000, C438S957000, C438S396000, C257S532000, C257S528000, C257SE27048, C029S025010, C029S025030, C029S025410
Reexamination Certificate
active
07553738
ABSTRACT:
A microelectronic device, a method of fabricating the device, and a system including the device. The method includes: providing a substrate including an underlying conductive layer and a polymer build-up layer overlying the underlying conductive layer; providing a passive microelectronic structure; embedding the passive structure in the polymer build-up layer of the substrate; and patterning the passive structure after embedding, patterning including over-etching the bottom electrode layer. The passive microelectronic structure being embedded includes an unpatterned bottom electrode layer; an unpatterned capacitor dielectric layer overlying the bottom electrode layer; and an unpatterned top electrode layer overlying the capacitor dielectric layer.
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Min Yongki
Seh Huankiat
Blakely , Sokoloff, Taylor & Zafman LLP
Crawford Latanya
Intel Corporation
Wilczewski M.
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