Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1992-12-30
1993-10-26
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
437129, 372 32, 372 99, H01L 2120
Patent
active
052561640
ABSTRACT:
A gain medium is disposed between two mirrors to form a resonant cavity. The cavity length is selected so that the gain bandwidth of the gain medium is less than or substantially equal to the frequency separation of the cavity modes and such that a cavity mode frequency falls within the gain bandwidth. A nonlinear optical material is disposed either inside or outside the cavity to generate new laser wavelengths. The nonlinear optical material may be contained in a cavity which is resonant at the microchip laser frequency. Alternatively, the microchip laser may be tuned, for example thermally or by the application of a longitudinal or transverse stress, to the frequency of the resonant cavity. The laser is optically pumped by any appropriate source such as a semiconductor injection laser or laser array. Suitable gain media include Nd:YAG, Nd:GSGG and Nd pentaphosphate, and suitable non-linear optical material include MqO:LiNbO.sub.3 and KTP.
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Chaudhuri Olik
Massachusetts Institute of Technology
Paladugu Ramamohan Rao
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