Method of fabricating a memory device with a multilayer insulati

Details Method of fabricating a memory device with a multilayer insulati Method of fabricating a memory device with a multilayer insulati

1992-07-02

1995-01-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053842766

ABSTRACT:
A method of fabricating a semiconductor device is disclosed. The method comprises the steps of: forming a multi-layer film comprising two or more kinds of layers; performing first etching for patterning said multi-layer film under a first etching condition; and performing second etching for forming irregularities in the side faces of said patterned multi-layer film under a second etching condition.

REFERENCES:
patent: 5071783 (1991-12-01), Taguchi et al.
S. Inoue et al., "A New Stacked Capacitor Cell with Thin Box Structure Storage Node," Extended Abstracts of 21st Conference on Solid State Devices and Materials, Tokyo, 1989, pp. 141-144.
T. Ema et al., "3-Dimensional Stacked Capacitor Cell for 16M and 64 Drams:", IEDM Tech. 1988 (IEEE) pp. 592-595.

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