Method of fabricating a membrane structure

Details Method of fabricating a membrane structure Method of fabricating a membrane structure

1984-10-15

1985-09-24

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 82, 427272, 427275, 427379, B05D 512

Patent

active

045432660

ABSTRACT:
A thin film which becomes a membrane is formed over one major surface of a substrate by a plasma deposition process utilizing microwave electron cyclotron resonance. The substrate is then removed, other than a portion of the substrate which remains as a frame, so as to form a membrane structure. A dense and high quality membrane is formed at a low temperature and the internal stress of the membrane controlled by varying the conditions under which the plasma deposition process is carried out and by heat treating the thin film after its formation.

REFERENCES:
patent: 3540926 (1970-11-01), Rairden, III
patent: 4284678 (1981-08-01), Jones
patent: 4401054 (1983-08-01), Matsuo et al.
Journal of the Electrochemical Society, vol. 129 (1982), Mar., No. 3, Manchester, N.H., p. 112C.
Japanese Journal of Applied Physics, vol. 17, No. 9 (1978), pp. 1693-1694.
IBM Technical Disclosure Bulletin, vol. 21, No. 10, Mar. 1979, pp. 4247-4248.
Misao Sekimoto et al.; "Silicon Nitride Single-Layer X-Ray Mask" J. Vac. Sci. Technol., 21(4), Nov./Dec. 1982; pp. 1017-1021.

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