Method of fabricating a light image detector and a linear image

Details Method of fabricating a light image detector and a linear image Method of fabricating a light image detector and a linear image

1986-08-12

1988-03-01

Powell, William A.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136258, 156652, 156653, 156656, 156657, 1566591, 156662, 250211J, 250578, 357 30, 357 58, 437 3, 437 61, 437228, H01L 4500, H01L 21306, H01J 4014, B44C 122

Patent

active

047289970

ABSTRACT:
A method of fabricating a light image detector is provided in which there are deposited on a substrate a layer of a conducting material then successively p.sup.+ doped, undoped, n.sup.+ doped, undoped, then p.sup.+ doped semiconductor layers. Then at least one column of material is etched in these layers. The in the column thus obtained, individual detectors are formed solely in the semiconductor layers. The sides of the individual detectors are then irradiated. Finally, line electrodes are deposited in contact with the upper parts of the detectors not covered with an isolating layer.

REFERENCES:
patent: 4316206 (1982-02-01), Bottka et al.
patent: 4482804 (1984-11-01), Oritsuki et al.
Extended Abstracts of the 15th Conference on Solid State Devices and Materials, Tokyo, 1983, pp. 205-208, Tokyo, JP; H. Yamamoto et al.: "High Speed Contact Type Linear Sensor Array Using A-Si Pin Diodes".

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