Method of fabricating a light emitting device, and light...

Details Method of fabricating a light emitting device, and light... Method of fabricating a light emitting device, and light...

2006-12-05

2006-12-05

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S013000, C257S051000, C257S097000, C257SE33021, C257SE33025, C257SE33027, C257SE33032

Reexamination Certificate

active

07145180

ABSTRACT:
In the fabricating of a light emitting device, a light emitting layer portion24and a current spreading layer7,respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion24is formed by a metal organic vapor-phase epitaxy process, and the current spreading layer7, on such light emitting layer portion24, is formed to have conductivity type of n-type by a hydride vapor-phase epitaxy process.

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