Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Patent
1997-04-02
2000-03-14
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
117 3, 117 54, 117957, C30B 3302
Patent
active
060367709
ABSTRACT:
Methods are described for the depositing of a plurality of films, preferably mercury cadmium telluride (HgCdTe), whose compositions vary in a controlled manner to provide unique infrared spectral absorption and detection properties. HgCdTe films 64 and 70 are deposited on opposite sides of electrically insulating, IR transmissive film 42. Initially these HgCdTe films may be of uniform composition laterally from 62 to 66 and 68 to 72. However the interdiffusion and segregation coefficients of Hg and Cd are different and vary differently with respect to temperature. By placing film 70 in contact with heater 9, a controlled lateral gradient in composition of the film may be effected because 44 is hotter than 45 and will produce higher Cd concentration at 68 than 72. Similarly 62 will be higher in Cd than 66, however, the gradient will be much less because 64 is cooler than 70. Through the use of a heater 60, the lateral compositional gradient of 64 may be varied with respect to film 70. The close tracking of the IR properties of 70 and 64 can provide useful and novel integrated IR devices such as multiple band spectrometers.
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Chandra Dipankar
Penn Thomas C.
Weirauch Donald F.
Kunemund Robert
Raytheon Company
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