Metal working – Barrier layer or semiconductor device making
Patent
1991-07-05
1993-09-21
Hearn, Brian E.
Metal working
Barrier layer or semiconductor device making
29 2502, 437 41, 437181, 437229, H01L 2168
Patent
active
052464687
ABSTRACT:
The invention is concerned with a production process for a lateral metal-insulator-metal (MIM) device for use in liquid crystal displays. A conductive pattern is formed on a transparent substrate, followed by formation of a barrier layer insulator on top of the conductive pattern. Positive photoresist is applied and light is passed through the back side of the substrate. The photoresist is developed and the barrier layer insulator is etched until the sides of the conductive pattern are exposed. A thin insulator layer is formed on the exposed sides. The lateral MIM structure is completed with the formation of a second conductive layer, or electrode, over the thin insulator. With the method of this invention, breakage of the electrode does not occur because the underlying conductor is not undercut from etching, as occurs in prior art MIM production processes.
REFERENCES:
patent: 4683183 (1992-07-01), Ono
patent: 4929059 (1990-05-01), Takahashi
patent: 4988168 (1991-01-01), Dickerson et al.
patent: 5008732 (1991-04-01), Kondo et al.
patent: 5010027 (1991-04-01), Possin et al.
patent: 5015597 (1991-05-01), Vinouze et al.
patent: 5039204 (1991-08-01), Choi
patent: 5042917 (1991-08-01), Fujita et al.
1988 International Display Research Conference, Oct. 1988, pp. 226-229; R. L. Wisnieff et al.: A Lift-Off Process to Build Edge Junction MIM Active Device Arrays.
S. Morozumi et al.: `A 240.times.250 element LCD Addressed by Lateral MIM` pp. 404-407, Japan Display, 1983.
Takahashi Kotoyoshi
Ushiki Takeyoshi
Hearn Brian E.
Picardat Kevin M.
Seiko Epson Corporation
Werner Raymond J.
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