Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-04-10
2007-04-10
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S905000
Reexamination Certificate
active
11000895
ABSTRACT:
Provided is a method of fabricating a laser diode including a lower Al-containing semiconductor material layer, a active layer, and an upper Al-containing semiconductor material layer. The method includes thermally cleaning the inside of a deposition reactor in which a substrate on which the lower Al-containing semiconductor material layer is stacked is loaded. During the thermal cleaning process, the inside of the deposition reactor is thermally treated at a predetermined temperature in an atmosphere of a gas mixture of AsH3and H2that is injected into the deposition reactor.
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Tetsuya Takeuchi et al., “Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3 μm InGaAsN Vertical Cavity Surface Emitting Lasers”, Japanese Journal of Applied Physics, vol. 43, No. 4A, 2004, pp. 1260-1263, 2004 The Japan Society of Applied Physics.
Kim Ki-sung
Park Yong-jo
Buchanan & Ingersoll & Rooney PC
Smoot Stephen W.
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