Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1997-12-23
1999-12-14
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438 69, 438 73, 257231, H01L 2170
Patent
active
06001668&
ABSTRACT:
By incorporating an ITO electrode which is more transparent than polysilicon, and designing the pixel such that it has asymmetric gates with as much as possible of its light sensitive region covered by an ITO electrode, light sensitivity is increased. To solve the problem of impurity diffusion from the ITO electrode into the silicon below, the conventional Silicon Dioxide gate dielectric was replaced with an Oxide/Nitride/Oxide stack. Employing at least some polysilicon electrodes with ITO electrodes is desirable to allow entrance passages through which hydrogen passivation can be accomplished. The pixel architecture can be designed to increase sensitivity further by other design choices. The first of these choices is to incorporate a lenslet on each pixel such that as much as possible of the light falling on the pixel is made to pass through the portion of the pixel covered with ITO. The pixel light sensitivity improves not only because the light passes through the more transparent ITO electrode, but also because some of the light that would have fallen on the LOD region and would be lost, is now collected. The second method is for color CCD sensors with color filter patterns, such as the "BAYER" color filter pattern to name just one, to have the overlap of the color filters, which does not allow light transmission, to occur over the less sensitive area of the pixel, which is the area covered with the polysilicon electrode. For proper operation a slight modification of the vertical clock timing is needed.
REFERENCES:
patent: 5677202 (1997-10-01), Hawkins et al.
patent: 5719074 (1998-02-01), Hawkins et al.
Anagnostopoulos Constantine N.
Chang Win-chyi
Kosman Stephen Lawrence
Bowers Charles
Christianson Keith
Eastman Kodak Company
Leimbach James D.
LandOfFree
Method of fabricating a image sensor having ITO electrodes with does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a image sensor having ITO electrodes with , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a image sensor having ITO electrodes with will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-862582