Method of fabricating a high-voltage semiconductor device having

Details Method of fabricating a high-voltage semiconductor device having Method of fabricating a high-voltage semiconductor device having

1991-02-15

1992-05-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437177, 437179, 437904, 148DIG139, 148DIG140, H01L 2144

Patent

active

051127741

ABSTRACT:
A semiconductor device such as a Schottky-barrier rectifier diode is disclosed which has a barrier electrode formed on a semiconductor substrate of gallium arsenide or the like. Formed around the barrier electrode is an annular resistive layer, typically of titanium oxide, creating a Schottky barrier at its interface with the semiconductor substrate. The resistive layer has a sheet resistance of more than 10 kilohms per square. In order to prevent preliminary breakdowns from taking place at the peripheral part of the resistive layer before final breakdown of the device, the sheet resistance of the resistive layer is made higher as it extends away from the barrier electrode. For the ease of manufacture, the resistive layer can be divided into two or more annular regions of distinctly different sheet resistances.

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Oxidation of Metals; Karl Hauffe; 1965; pp. 208-237; Plenum Press.

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