Method of fabricating a high voltage, high speed Schottky semico

Details Method of fabricating a high voltage, high speed Schottky semico Method of fabricating a high voltage, high speed Schottky semico

1990-10-17

1992-10-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437176, 437179, 148DIG140, H01L 2144

Patent

active

051589095

ABSTRACT:
A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resisitve layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.

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Oxidation of Metals; Hauffe; 1965; pp. 208-237.

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